Fraunhofer IAF
 
 
 
 
 
 
 
 Fraunhofer Gesellschaft

 

Semiconductor Lasers and Light Emitting Diodes   Semiconductor Lasers and Light Emitting Diodes
 
 

Contact

Prof. Joachim Wagner
Phone: +49 (0) 761/5159-352
Fax: +49 (0) 761/5159-677
E-Mail: joachim.wagner
@iaf.fraunhofer.de

Dr. Marcel Rattunde
Phone: +49 (0) 761/5159-643
Fax: +49 (0) 761/5159-677
E-Mail: marcel.rattunde
@iaf.fraunhofer.de

 

Building on our outstanding expertise in III-V compound semiconductor epitaxy and technology, we develop novel semiconductor lasers and light-emitting diodes (LEDs) for a wide range of applications.

Covering the 1.8 to 12 µm infrared spectral range, we concentrate on GaSb-based diode lasers and optically pumped semiconductor disk lasers (OPSDL or VECSEL) on one hand and on InP-based quantum cascade lasers (QCL) on the other. Targeted applications include pumping of solid-state lasers, security-related applications such as the detection of hazardous substances and infrared counter measures, optical free-space communication, as well as medical diagnostics and therapy.
On the short-wavelength side of the visible spectrum (320-450 nm), (AlGaIn)N-based LEDs and diode lasers are under development for e.g. lighting and sensing applications.

All necessary competences ranging from device design to epitaxy, front- and backside processing, packaging, testing, as well as module and sub-system development and integration are available within our institute. We provide prototype samples as well as complete modules and sub-systems and manufacture infrared semiconductor lasers in small quantities.
     
     
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Fraunhofer IAF